Affiliation: NYU Abu Dhabi
Education: BA BirZeit University; MA University of Jordan; PhD Khalifa University (MI& MIT program)
Dr. Ghada Dushaq received her bachelor's degree from BirZeit University, Palestine in physics & mathematics in 2009 and her master's degree in physics in 2012 from University of Jordan. Dr. Dushaq earned a PhD in Interdisciplinary Engineering (Microsystem Engineering) from Masdar Institute of Science and Technology in 2017.
During her PhD work, Dr. Dushaq focused on developing a low-temperature technique to grow Germanium directly on Silicon using RF-PECVD. The work included an extensive material characterization and the grown Ge layers are used to fabricate MOSCAPS and photodetectors on CMOS compatible platform. Additionally, Dr. Dushaq has been involved in other research projects included: studying and designing of micro-opto-mechanical structures for inertia sensing, tailoring the optical properties of boron doped μc-Si:H thin films by changing the SiH4/H2 ratio using RF-PECVD process, structural characterization of electric-field assisted dip-coating of gold nanoparticles on silicon, aluminum oxide, and hafnium oxide and electrical and optical characterization of ZnO/Al2O3 alloy growth using atomic layer deposition. Currently, she is a postdoctoral associate at Prof. Mahmoud Rasras research group at New York University, Abu Dhabi. Her current research focuses on a variety of problems related to new and innovative materials, structures, and process technology of silicon, germanium, III-V and 2D materials for VLSI, high-speed optoelectronics, and nanoelectronics.
Dr. Dushaq has over 25 papers in international journals and conference proceedings. In addition, she has a one filled patent. She is a member of OSA, ECS, APS, and MRS. She has received the German Academic exchange services (DAAD) and the Masdar Institute of Science and Technology Fellowship.
Dr. Dushaq's current research focuses on a variety of problems related to new and innovative materials, structures, and process technology of silicon, germanium, III-V and 2D materials for VLSI, high speed optoelectronics and nanoelectronics.